Light emitting device having a stacked structure

ABSTRACT

A light emitting device including a first light emitting part including a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer, a second light emitting part disposed on a first surface of the first light emitting part, and including a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer, the second n-type semiconductor layer having a first surface and a second surface opposing the first surface, a third light emitting part disposed on a first surface of the second light emitting part, and including a third n-type semiconductor layer, a third active layer, and a third p-type semiconductor layer, a first contact structure contacting the first surface of the second n-type semiconductor layer, and a second contact structure contacting the second surface of the second n-type semiconductor layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional PatentApplication No. 62/731,206, filed on Sep. 14, 2018, which is herebyincorporated by reference for all purposes as if fully set forth herein.

BACKGROUND Field

Exemplary embodiments of the invention relate generally to a lightemitting device, and more particularly, to a light emitting device inwhich a plurality of light emitting layers are stacked.

Discussion of the Background

Light emitting diodes, as inorganic light sources, are being diverselyused in various fields, such as display devices, vehicle lamps, andgeneral lighting. Light emitting diodes are rapidly replacing existinglight sources due to their longer lifetime, lower power consumption, andquicker response speed than the existing light sources.

In particular, a display device generally displays various colors byutilizing mixed colors of blue, green, and red. Each pixel of a displaydevice includes blue, green, and red sub pixels, and the color of aparticular pixel is determined through the colors of these sub-pixels,and an image is implemented by a combination of pixels.

Light emitting diodes have been mainly used as backlight sources indisplay devices. However, recently, a micro LED display has beendeveloped as a next generation display, which directly implements imagesby using light emitting diodes.

The above information disclosed in this Background section is only forunderstanding of the background of the inventive concepts, and,therefore, it may contain information that does not constitute priorart.

SUMMARY

Light emitting devices constructed according to exemplary embodiments ofthe invention have excellent light reproducibility.

Additional features of the inventive concepts will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the inventive concepts.

A light emitting device including a first light emitting part includinga first n-type semiconductor layer, a first active layer, and a firstp-type semiconductor layer, a second light emitting part disposed on afirst surface of the first light emitting part, and including a secondn-type semiconductor layer, a second active layer, and a second p-typesemiconductor layer, the second n-type semiconductor layer having afirst surface and a second surface opposing the first surface, a thirdlight emitting part disposed on a first surface of the second lightemitting part, and including a third n-type semiconductor layer, a thirdactive layer, and a third p-type semiconductor layer, a first contactstructure contacting the first surface of the second n-typesemiconductor layer, and a second contact structure contacting thesecond surface of the second n-type semiconductor layer.

The first contact structure may extend into the first light emittingpart to electrically contact the first n-type semiconductor layer, andthe second contact structure may extend into the second light emittingpart to electrically contact the third n-type semiconductor layer.

The light emitting device may further include a third contact structureextending into the third light emitting part to electrically contact thethird n-type semiconductor layer.

The light emitting device may further include a common pad disposed at afirst corner of the light emitting device, and electrically coupled withthe first, second, and third n-type semiconductor layers, a first paddisposed at a second corner of the light emitting device, andelectrically coupled with the first p-type semiconductor layer, a secondpad disposed at a third corner of the light emitting device, andelectrically coupled with the second p-type semiconductor layer, and athird pad disposed at a fourth corner of the light emitting device, andelectrically coupled with the third p-type semiconductor layer, in whichthe first, second, and third n-type semiconductor layers areelectrically coupled with one another by the first to third contactstructures.

The second light emitting part may have a mesa structure, such that aportion thereof in the second corner is removed, and the third lightemitting part may have a mesa structure, such that portions thereof inthe second and third corners are removed.

The light emitting device may further include a first color filtersurrounding an outer sidewall of the first contact structure, andextending onto the first p-type semiconductor layer, a first adhesionlayer surrounding an outer sidewall of the first color filter, andextending onto the first color filter, a second color filter surroundingan outer sidewall of the second contact structure, and extending ontothe second p-type semiconductor layer, and a second adhesion layersurrounding an outer sidewall of the second color filter, and extendingonto the second color filter.

The first contact structure may extend into the second light emittingpart, and the second contact structure may extend into the third lightemitting part and is electrically coupled with the third n-typesemiconductor layer.

One surface of the first contact structure may electrically contact thesecond n-type semiconductor layer, and the other surface of the firstcontact structure may electrically contact the first n-typesemiconductor layer.

The light emitting device may further include a common pad disposed at afirst corner of the light emitting device, and electrically coupled withthe first, second, third n-type semiconductor layers, a first paddisposed at a second corner of the light emitting device, andelectrically coupled with the first p-type semiconductor layer, a secondpad disposed at a third corner of the light emitting device, andelectrically coupled with the second p-type semiconductor layer, and athird pad disposed at a fourth corner of the light emitting device, andelectrically coupled with the third p-type semiconductor layer, in whichthe first, second, third n-type semiconductor layers are electricallycoupled with one another by the first and second contact structures.

The first light emitting part may have a mesa structure, such that thefirst n-type semiconductor layer and the second active layer are notformed in at least a portion of the second corner, the second lightemitting part may have a mesa structure, such that portions thereof inthe second and third corners are removed, and the third light emittingpart has a mesa structure, such that a portion thereof in e fourthcorner is removed.

The light emitting device may further include a first color filtersurrounding an outer sidewall of the first contact structure, andextending onto the second p-type semiconductor layer, a first adhesionlayer surrounding an outer sidewall of the first color filter, andextending onto the first color filter, a second color filter surroundingan outer sidewall of the second contact structure, and extending ontothe third p-type semiconductor layer, and a second adhesion layersurrounding an outer sidewall of the second color filter, and extendingonto the second color filter.

The light emitting device may further include a third contact structureextending into the first light emitting part and electrically contactingthe first n-type semiconductor layer.

The first contact structure and the third contact structure may be inelectrical contact with each other.

Each of the first, second, and third contact structures may include anohmic layer, a first conductive layer, a barrier layer, a secondconductive layer, and a bonding layer, and the bonding layer of thefirst contact structure and the bonding layer of the third contactstructure may contact each other.

The light emitting device may further include a common pad disposed at afirst corner of the light emitting device, and electrically coupled withthe first, second, and third n-type semiconductor layers, a first paddisposed at a second corner of the light emitting device, andelectrically coupled with the first p-type semiconductor layer, a secondpad disposed at a third corner of the light emitting device, andelectrically coupled with the second p-type semiconductor layer, and athird pad disposed at a fourth corner of the light emitting device, andelectrically coupled with the third p-type semiconductor layer, in whichthe first, second, and third n-type semiconductor layers may beelectrically coupled with one another by the first, second, and thirdcontact structures.

The second light emitting part may have a mesa structure, such thatportions thereof in the second and third corners are removed, and thethird light emitting part may have a mesa structure, such that a portionthereof in the fourth corner is removed.

The light emitting device may further include a first color filtersurrounding an outer sidewall of the third contact structure, andextending onto the first p-type semiconductor layer, a first adhesionlayer surrounding an outer sidewall of the first color filter, andextending onto the first color filter, a second color filter surroundingan outer sidewall of the second contact structure, and extending ontothe third p-type semiconductor layer, and a second adhesion layersurrounding an outer sidewall of the second color filter, and extendingonto the second color filter.

The light emitting device may further include a substrate disposed overa second surface of the first light emitting part opposing the firstsurface thereof.

The light emitting device may further include a common pad disposed onthe third light emitting part, and electrically coupling the first,second, and third n-type semiconductor layers, a first pad disposed onthe third light emitting part, and electrically coupled with the firstp-type semiconductor layer, a second pad disposed on the third lightemitting part, and electrically coupled with the second p-typesemiconductor layer, and a third pad disposed on the third lightemitting part, and electrically coupled with the third p-typesemiconductor layer.

The light emitting device may further include a support substratedisposed on the third light emitting part, and including throughelectrodes electrically coupled with the common pad, the first pad, thesecond pad, and the third pad, respectively

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of theinvention, and together with the description serve to explain theinventive concepts.

FIG. 1A is a top view of a light emitting device according to anexemplary embodiment.

FIGS. 1B, 1C, and 1D are cross-sectional views taken along line A-A′ ofFIG. 1A according to exemplary embodiments.

FIG. 2A is a top view of a light emitting device according to anotherexemplary embodiment.

FIG. 2B is a cross-sectional view taken along line A-A′ of FIG. 2A.

FIG. 3 is a cross-sectional view of a light emitting device according tostill another exemplary embodiment.

FIG. 4 is a cross-sectional view of a light emitting device according toyet still another exemplary embodiment.

FIGS. 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, and 17 arecross-sectional views illustrating a method for manufacturing a lightemitting device according to an exemplary embodiment.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments or implementations of theinvention. As used herein “embodiments” and “implementations” areinterchangeable words that are non-limiting examples of devices ormethods employing one or more of the inventive concepts disclosedherein. It is apparent, however, that various exemplary embodiments maybe practiced without these specific details or with one or moreequivalent arrangements. In other instances, well-known structures anddevices are shown in block diagram form in order to avoid unnecessarilyobscuring various exemplary embodiments. Further, various exemplaryembodiments may be different, but do not have to be exclusive. Forexample, specific shapes, configurations, and characteristics of anexemplary embodiment may be used or implemented in another exemplaryembodiment without departing from the inventive concepts.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail of someways in which the inventive concepts may be implemented in practice.Therefore, unless otherwise specified, the features, components,modules, layers, films, panels, regions, and/or aspects, etc.(hereinafter individually or collectively referred to as “elements”), ofthe various embodiments may be otherwise combined, separated,interchanged, and/or rearranged without departing from the inventiveconcepts.

The use of cross-hatching and/or shading in the accompanying drawings isgenerally provided to clarify boundaries between adjacent elements. Assuch, neither the presence nor the absence of cross-hatching or shadingconveys or indicates any preference or requirement for particularmaterials, material properties, dimensions, proportions, commonalitiesbetween illustrated elements, and/or any other characteristic,attribute, property, etc., of the elements, unless specified. Further,in the accompanying drawings, the size and relative sizes of elementsmay be exaggerated for clarity and/or descriptive purposes. When anexemplary embodiment may be implemented differently, a specific processorder may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order. Also, like reference numerals denote like elements.

When an element, such as a layer, is referred to as being “on,”“connected to,” or “coupled to” another element or layer, it may bedirectly on, connected to, or coupled to the other element or layer orintervening elements or layers may be present. When, however, an elementor layer is referred to as being “directly on,” “directly connected to,”or “directly coupled to” another element or layer, there are nointervening elements or layers present. To this end, the term“connected” may refer to physical, electrical, and/or fluid connection,with or without intervening elements. Further, the D1-axis, the D2-axis,and the D3-axis are not limited to three axes of a rectangularcoordinate system, such as the x, y, and z-axes, and may be interpretedin a broader sense. For example, the D1-axis, the D2-axis, and theD3-axis may be perpendicular to one another, or may represent differentdirections that are not perpendicular to one another. For the purposesof this disclosure, “at least one of X, Y, and Z” and “at least oneselected from the group consisting of X, Y, and Z” may be construed as Xonly, Y only, Z only, or any combination of two or more of X, Y, and Z,such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Although the terms “first,” “second,” etc. may be used herein todescribe various types of elements, these elements should not be limitedby these terms. These terms are used to distinguish one element fromanother element. Thus, a first element discussed below could be termed asecond element without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,”“above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), andthe like, may be used herein for descriptive purposes, and, thereby, todescribe one elements relationship to another element(s) as illustratedin the drawings. Spatially relative terms are intended to encompassdifferent orientations of an apparatus in use, operation, and/ormanufacture in addition to the orientation depicted in the drawings. Forexample, if the apparatus in the drawings is turned over, elementsdescribed as “below” or “beneath” other elements or features would thenbe oriented “above” the other elements or features. Thus, the exemplaryterm “below” can encompass both an orientation of above and below.Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90degrees or at other orientations), and, as such, the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof. It is also noted that, as used herein, the terms“substantially,” “about,” and other similar terms, are used as terms ofapproximation and not as terms of degree, and, as such, are utilized toaccount for inherent deviations in measured, calculated, and/or providedvalues that would be recognized by one of ordinary skill in the art.

Various exemplary embodiments are described herein with reference tosectional and/or exploded illustrations that are schematic illustrationsof idealized exemplary embodiments and/or intermediate structures. Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should notnecessarily be construed as limited to the particular illustrated shapesof regions, but are to include deviations in shapes that result from,for instance, manufacturing. In this manner, regions illustrated in thedrawings may be schematic in nature and the shapes of these regions maynot reflect actual shapes of regions of a device and, as such, are notnecessarily intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and should not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1A is a top view of a light emitting device according to anexemplary embodiment, and FIGS. 1B, 1C, and 1D are cross-sectional viewstaken along line A-A′ of FIG. 1A according to exemplary embodiments.

Referring to FIGS. 1A to 1C, a light emitting device may include a firstlight emitting part LE1, a second light emitting part LE2, and a thirdlight emitting part LE3, which are vertically stacked on a substrate100.

The substrate 100 may be capable of growing a gallium nitride-basedsemiconductor layer thereon, and may include a sapphire (Al₂O₃), asilicon carbide (SiC), a gallium nitride (GaN), an indium galliumnitride (InGaN), an aluminum gallium nitride (AlGaN), an aluminumnitride (AlN), a gallium oxide (Ga₂O₃), or silicon. Also, the substrate100 may be a patterned sapphire substrate.

One surface of the substrate 100 may be brought into contact with thefirst light emitting part LE1, and the other, opposing surface may bethe light extraction surface of the light emitting device. In someexemplary embodiments, the substrate 100 may be removed. In this case,one surface of the first light emitting part LE1 facing the substrate100 may be the light extraction surface of the light emitting device.When the light extraction surface is the other surface of the substrate100 or the one surface of the first light emitting part LE1, thewavelength of light emitted from the first light emitting part LE1 maybe the shortest, the wavelength of light emitted from the second lightemitting part LE2 may be longer than the wavelength of light emittedfrom the first light emitting part LE1 and shorter than the wavelengthof light emitted from the third light emitting part LE3, and thewavelength of light emitted from the third light emitting part LE3 maybe the longest. For example, the first light emitting part LE1 may emitblue light, the second light emitting part LE2 may emit green light, andthe third light emitting part LE3 may emit red light.

The first light emitting part LE1 may include a first n-typesemiconductor layer 102, a first active layer 104, a first p-typesemiconductor layer 106, and a first transparent electrode 108. Thesecond light emitting part LE2 may include a second n-type semiconductorlayer 202, a second active layer 204, a second p-type semiconductorlayer 206, and a second transparent electrode 208. The third lightemitting part LE3 may include a third n-type semiconductor layer 302, athird active layer 304, a third p-type semiconductor layer 306, and athird transparent electrode 308.

Each of the first n-type semiconductor layer 102, the second n-typesemiconductor layer 202, and the third n-type semiconductor layer 302may be a Si-doped gallium nitride-based semiconductor layer. Each of thefirst p-type semiconductor layer 106, the second p-type semiconductorlayer 206, and the third p-type semiconductor layer 306 may be aMg-doped gallium nitride-based semiconductor layer. Each of the firstactive layer 104, the second active layer 204, and the third activelayer 304 may include a multi-quantum well (MQW), and the compositionratio thereof may be determined to emit light of a desired peakwavelength. As each of the first transparent electrode 108, the secondtransparent electrode 208 and the third transparent electrode 308, atransparent conductive oxide (TCO), such as ZnO, indium tin oxide (ITO),zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), galliumindium oxide (GIO), zinc tin oxide (ZTO), fluorine-doped tin oxide(FTO), gallium-doped zinc oxide (GZO), aluminum-doped zinc oxide (AZO)may be used.

The light emitting device may further include a first contact structureCT1, which extends through a portion of the first light emitting partLE1, a second contact structure CT2, which extends through a portion ofthe second light emitting part LE2, and a third contact structure CT3,which extends through a portion of the third light emitting part LE3.

The first contact structure CT1, the second contact structure CT2, andthe third contact structure CT3 may include ohmic layers 110, 210, and310, first conductive layers 112, 212, and 312, barrier layers 114, 214,and 314, second conductive layers 116, 216, and 316, and bonding layers118, 218, and 318, respectively. At least one of the ohmic layer 110,210, and 310 may include Cr, at least one of the first conductive layer112, 214, and 314 may include Al, at least one of the barrier layer 114,214, and 314 may include Ti and Ni, which are stacked a plurality oftimes, at least one of the second conductive layer 116, 216, and 316 mayinclude Au, and at least one of the bonding layer 118, 218, and 318 mayinclude In or Sn.

According to an exemplary embodiment, the first contact structure CT1,the second contact structure CT2, and the third contact structure CT3may be disposed to overlap one another. When the light emitting devicehas a substantially quadrangular structure when viewed from the top, thefirst contact structure CT1, the second contact structure CT2, and thethird contact structure CT3 may be sequentially disposed to overlap oneanother at a first corner CN1 of the light emitting device.

The light emitting device may further include a first color filter CF1,a first adhesion layer AD1, and a second adhesion layer AD2, which aredisposed between the first light emitting part LE1 and the second lightemitting part LE2, and a second color filter CF2 and a third adhesionlayer AD3, which are disposed between the second light emitting part LE2and the third light emitting part LE3.

Each of the first color filter CF1 and the second color filter CF2 mayinclude a distributed Bragg reflector (DBR) having a structure, in whichTiO₂ and SiO₂ are alternately stacked. However, the inventive conceptsare not limited thereto, and in some exemplary embodiments, the colorfilters CF1 and CF2 may include other dielectric materials, such asSiN_(x), Al₂O₃, Ta₂O₅ or the like. For example, the first color filterCF1 and the second color filter CF2 may be different in terms of thecomposition ratio and alternate stacking order and number of TiO₂ andSiO₂. According to an exemplary embodiment, the first color filter CF1may selectively pass light generated from the second light emitting partLE2 and light generated from the third light emitting part LE3, and mayreflect light generated from the first light emitting part LE1. Thesecond color filter CF2 may selectively pass light generated from thethird light emitting part LE3, and may reflect light generated from thefirst light emitting part LE1 and light generated from the second lightemitting part LE2. The first color filter CF1 and the second colorfilter CF2 may function as insulation layers.

Each of the first adhesion layer AD1, the second adhesion layer AD2, andthe third adhesion layer AD3 may include a material, which has anadhesion property and high transmittance, such as silicon on glass(SOG), epoxy, polyimide, SUB, benzo cyclo butane (BCB) or others.

In the first light emitting part LE1, the first n-type semiconductorlayer 102, the first active layer 104, the first p-type semiconductorlayer 106, and the first transparent electrode 108 may be sequentiallystacked. The first light emitting part LE1 may have a first hole H1 (seeFIG. 6), which passes through the first transparent electrode 108, thefirst p-type semiconductor layer 106, and the first active layer 104.The first hole H1 may have a constant width or a width that graduallydecreases in a downward direction. As such, an area of the firsttransparent electrode 108 may be the same or less than an area of thefirst p-type semiconductor layer 106, and an area of the first p-typesemiconductor layer 106 may be the same or less than an area of thefirst active layer 104.

The first hole H1 may partially expose the first n-type semiconductorlayer 102. The first contact structure CT1 may be disposed in the firsthole H1, and may have a structure which projects out of the firsttransparent electrode 108. More particularly, the top surface of thefirst contact structure CT1 may be disposed at a level higher than thetop surface of the first transparent electrode 108. According to anexemplary embodiment, in the first contact structure CT1, the ohmiclayer 110, the first conductive layer 112, the barrier layer 114, thesecond conductive layer 116, and the bonding layer 118 may besequentially stacked.

The first adhesion layer AD1 may surround the outer sidewall of thefirst contact structure CT1 in the first hole H1, and extend onto thefirst transparent electrode 108. The first color filter CF1 may surroundthe outer sidewall of the first adhesion layer AD1 in the first hole H1,extend onto the first transparent electrode 108, and be disposed betweenthe first transparent electrode 108 and the first adhesion layer AD1.

In the second light emitting part LE2, the second transparent electrode208, the second p-type semiconductor layer 206, the second active layer204, and the second n-type semiconductor layer 202 may be sequentiallystacked. The second light emitting part LE2 may have a second hole H2(see FIG. 11), which passes through the second transparent electrode208, the second p-type semiconductor layer 206, and the second activelayer 204. The second hole H2 may have a width that is constant orgradually increases in the downward direction. As such, the secondactive layer 204 may have a constant width or a width greater than thesecond p-type semiconductor layer 206, and the second p-typesemiconductor layer 206 may have a constant width or a width greaterthan the second transparent electrode 208.

The second hole H2 may partially expose the second n-type semiconductorlayer 202. The second contact structure CT2 may be disposed in thesecond hole H2, and may have a structure which projects out of thesecond transparent electrode 208. More particularly, the bottom surfaceof the second contact structure CT2 may be disposed at a level lowerthan the surface of the second transparent electrode 208. In the secondcontact structure CT2, the bonding layer 218, the second conductivelayer 216, the barrier layer 214, the first conductive layer 212, andthe ohmic layer 210 may be sequentially stacked.

The second adhesion layer AD2 may surround the outer sidewall of thesecond contact structure CT2, and extend onto the second transparentelectrode 208.

While the first color filter CF1 is illustrated as being disposedbetween the first transparent electrode 108 and the first adhesion layerAD1, however, the inventive concepts are not limited thereto. Forexample, in some exemplary embodiments, the first color filter CF1 maybe disposed between the second transparent electrode 208 and the secondadhesion layer AD2.

According to an exemplary embodiment, as the first contact structure CT1and the second contact structure CT2 are brought into electrical contactwith each other, the first n-type semiconductor layer 102 and the secondn-type semiconductor layer 202 may be electrically coupled with eachother. The bonding layer 118 of the first contact structure CT1 and thebonding layer 218 of the second contact structure CT2 may be bonded witheach other. With respect to the bonding surface of the first contactstructure CT1 and the second contact structure CT2, the first contactstructure CT1 and the second contact structure CT2 may havesubstantially symmetrical structure as each other. In particular, thebonding layer 118, the second conductive layer 116, the barrier layer114, the first conductive layer 112, and the ohmic layer 110 may bedisposed from the bonding surface in the first contact structure CT1,and the bonding layer 218, the second conductive layer 216, the barrierlayer 214, the first conductive layer 212, and the ohmic layer 210 maybe disposed from the bonding surface in the second contact structureCT2. In this manner, current applied to the second light emitting partLE2 and current applied to the first light emitting part LE1 may beuniform.

As the first adhesion layer AD1 and the second adhesion layer AD2 arebonded with each other, the first light emitting part LE1 and the secondlight emitting part LE2 may be physically bonded with each other.

In the third light emitting part LE3, the third transparent electrode308, the third p-type semiconductor layer 306, the third active layer304, and the third n-type semiconductor layer 302 may be sequentiallystacked. The third light emitting part LE3 may have a third hole H3 (seeFIG. 14), which passes through the third transparent electrode 308, thethird p-type semiconductor layer 306, and the third active layer 304.The third hole H3 may have a width that gradually increases in thedownward direction. As such, the third active layer 304 may have a widthgreater than the third p-type semiconductor layer 306, and the thirdp-type semiconductor layer 306 may have a width greater than the thirdtransparent electrode 308.

The third hole H3 may partially expose the third n-type semiconductorlayer 302. The third contact structure CT3 may be disposed in the thirdhole H3, and may have a structure which projects out of the thirdtransparent electrode 308. More particularly, the bottom surface of thethird contact structure CT3 may be disposed at a level lower than thesurface of the third transparent electrode 308. In the third contactstructure CT3, the bonding layer 318, the second conductive layer 316,the barrier layer 314, the first conductive layer 312, and the ohmiclayer 310 may be sequentially stacked. According to an exemplaryembodiment, since the first contact structure CT1, the second contactstructure CT2, and the third contact structure CT3 have substantiallythe same structure, current transferred to the first n-typesemiconductor layer 102, the second n-type semiconductor layer 202, andthe third n-type semiconductor layer 302 may be uniform.

The third adhesion layer AD3 may surround the outer sidewall of thethird contact structure CT3 in the third hole H3, and extend onto thethird transparent electrode 308. The second color filter CF2 maysurround the outer sidewall of the third adhesion layer AD3 in the thirdhole H3, extend onto the third transparent electrode 308, and bedisposed between the third transparent electrode 308 and the thirdadhesion layer AD3.

As described above, according to an exemplary embodiment, as the firstcontact structure CT1 and the second contact structure CT2 are broughtinto electrical contact with each other, the first n-type semiconductorlayer 102 and the second n-type semiconductor layer 202 may beelectrically coupled with each other. The bonding layer of the firstcontact structure CT1 and the bonding layer of the second contactstructure CT2 may be bonded to each other. Also, as the first adhesionlayer AD1 and the second adhesion layer AD2 are bonded to each other,the first light emitting part LE1 and the second light emitting part LE2may be physically bonded to each other.

According to another exemplary embodiment, as shown in FIG. 1D, as thesecond contact structure CT2 and the third contact structure CT3 arebrought into electrical contact with each other, the second n-typesemiconductor layer 202 and the third n-type semiconductor layer 302 maybe electrically coupled with each other. The bonding layer of the secondcontact structure CT2 and the bonding layer of the third contactstructure CT3 may be bonded with each other. Also, as the secondadhesion layer AD2 and the third adhesion layer AD3 are bonded with eachother, the second light emitting part LE2 and the third light emittingpart LE3 may be physically bonded with each other.

The light emitting device may further include a common pad CPD, whichelectrically couples the first n-type semiconductor layer 102, thesecond n-type semiconductor layer 202 and the third n-type semiconductorlayer 302, a first pad PD1 electrically coupled with the firsttransparent electrode 108, a second pad PD2 electrically coupled withthe second transparent electrode 208, and a third pad PD3 electricallycoupled with the third transparent electrode 308. Each of the common padCPD, the first pad PD1, the second pad PD2, and the third pad PD3 mayinclude at least one selected from the group consisting of Ag, Ni, Al,Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Cr, Ti, and Cu. The light emittingdevice may further include an insulation layer IDL for electricallyinsulating the common pad CPD, the first pad PD1, the second pad PD2,and the third pad PD3 from the third n-type semiconductor layer 302. Theinsulation layer IDL may include a silicon oxide or a silicon nitride,for example.

When the light emitting device has a substantially quadrangularstructure when viewed from the top, the common pad CPD may be disposedat the first corner CN1, the first pad PD1 may be disposed at a secondcorner CN2, the second pad PD2 may be disposed at a third corner CN3,and the third pad PD3 may be disposed at a fourth corner CN4.

The common pad CPD may be electrically coupled in common with the firstn-type semiconductor layer 102, the second n-type semiconductor layer202, and the third n-type semiconductor layer 302 by the first contactstructure CT1, the second contact structure CT2, and the third contactstructure CT3. As the common pad CPD is coupled in common with the firstn-type semiconductor layer 102, the second n-type semiconductor layer202, and the third n-type semiconductor layer 302, it is possible tostably supply current. As described above, while each of the firstp-type semiconductor layer 106, the second p-type semiconductor layer206, and the third p-type semiconductor layer 306 includes a Mg-dopedgallium nitride-based semiconductor layer, since the dopingconcentration of Mg is low, each of the first p-type semiconductor layer106, the second p-type semiconductor layer 206, and the third p-typesemiconductor layer 306 may have large contact resistance. As such, ascompared to a case where the common pad CPD electrically couples incommon the first p-type semiconductor layer 106, the second p-typesemiconductor layer 206, and the third p-type semiconductor layer 306,by electrically coupling in common the first n-type semiconductor layer102, the second n-type semiconductor layer 202, and the third n-typesemiconductor layer 302, it is possible to stably supply current.

Referring to FIGS. 1A to 1C, the first pad PD1 disposed on theinsulation layer EDL may be electrically coupled with the firsttransparent electrode 108 through a first via structure VS1, whichpasses through the third light emitting part LE3, the second colorfilter CF2, the third adhesion layer AD3, the second light emitting partLE2, the first adhesion layer AD1, and the first color filter CF1, andextends to the first transparent electrode 108. The insulation layer IDLmay have a structure, which extends on the third n-type semiconductorlayer 302 and surrounds the outer sidewall of the first via structureVS1. In some exemplary embodiments, the first pad PD1 and the first viastructure VS1 may be integrated with each other.

The second pad PD2 disposed on the insulation layer IDL may beelectrically coupled with the second transparent electrode 208 through asecond via structure VS2, which passes through the third light emittingpart LE3, the second color filter CF2, the third adhesion layer AD3, thesecond n-type semiconductor layer 202, the second active layer 204, andthe second p-type semiconductor layer 206 and extends to the secondtransparent electrode 208. The insulation layer IDL may have astructure, which extends on the third n-type semiconductor layer 302 andsurrounds the outer sidewall of the second via structure VS2. In someexemplary embodiments, the second pad PD2 and the second via structureVS2 may be integrated with each other.

The third pad PD3 disposed on the insulation layer IDL may beelectrically coupled with the third transparent electrode 308 through athird via structure VS3, which passes through the third n-typesemiconductor layer 302, the third active layer 304, and the thirdp-type semiconductor layer 306, and extends to the third transparentelectrode 308. In some exemplary embodiments, the third pad PD3 and thethird via structure VS3 may be integrated with each other.

Referring to FIG. 1C, the substrate 100 may be selectively removed. Thelight emitting device removed with the substrate 100 may be additionallyprovided with a support substrate SUB on the third light emitting partLE3. The support substrate SUB may suppress a phenomenon, in which thelight emitting device removed with the substrate 100 is bended (orbows). The support substrate SUB may include Si.

In this case, the light emitting device may further include a seventhvia structure VS7 electrically coupled with the first via structure VS1,a sixth via structure VS6 electrically coupled with the second viastructure VS2, a fifth via structure VS5 electrically coupled with thethird via structure VS3, and a fourth via structure VS4 electricallycoupled with the common pad CPD.

FIG. 2A is a top view of a light emitting device according to anotherexemplary embodiment, and FIG. 2B is a cross-sectional view taken alongline A-A′ of FIG. 2A.

Referring to FIGS. 2A and 2B, a light emitting device may include afirst light emitting part LE1, a first color filter CF1, a firstadhesion layer AD1, a second adhesion layer AD2, a second light emittingpart LE2, a third adhesion layer AD3, a second color filter CF2, and athird light emitting part LE3.

In the first light emitting part LE1, a first n-type semiconductor layer102, a first active layer 104, a first p-type semiconductor layer 106,and a first transparent electrode 108 may be sequentially stacked. Inthe second light emitting part LE2, a second transparent electrode 208,a second p-type semiconductor layer 206, a second active layer 204, anda second n-type semiconductor layer 202 may be sequentially stacked. Inthe third light emitting part LE3, a third transparent electrode 308, athird p-type semiconductor layer 306, a third active layer 304, and athird n-type semiconductor layer 302 may be sequentially stacked.

The light emitting device may include the first color filter CF1, thefirst adhesion layer AD1, and the second adhesion layer AD2, which aredisposed between the first light emitting part LE1 and the second lightemitting part LE2, and may include the second color filter CF2 and thethird adhesion layer AD3, which are disposed between the second lightemitting part LE2 and the third light emitting part LE3. The lightemitting device may further include a common pad CPD, which iselectrically coupled with the first n-type semiconductor layer 102, thesecond n-type semiconductor layer 202, and the third n-typesemiconductor layer 302, a first pad PD1 electrically coupled with thefirst p-type semiconductor layer 106, a second pad PD2 electricallycoupled with the second p-type semiconductor layer 206, and a third padPD3 electrically coupled with the third p-type semiconductor layer 306.

According to the illustrated exemplary embodiment, each of the secondlight emitting part LE2 and the third light emitting part LE3 may have amesa structure.

The light emitting device may have a substantially quadrangularstructure when viewed from the top, and respective corners may bereferred to as a first corner CN1, a second corner CN2, a third cornerCN3, and a fourth corner CN4. The second light emitting part LE2 mayhave a mesa structure by removing a portion thereof disposed in thesecond corner CN2 and the third corner CN3, and the third light emittingpart LE3 may have a mesa structure by removing a portion thereofdisposed in the second corner CN2, the third corner CN3, and the fourthcorner CN4.

In particular, the second light emitting part LE2 may have a structure,in which the second n-type semiconductor layer 202, the second activelayer 204, the second n-type semiconductor layer 202, and the secondtransparent electrode 208 disposed at the second corner CN2 are etched,and the second p-type semiconductor layer 206, the second active layer204, and the second n-type semiconductor layer 202 disposed at the thirdcorner CN3 are etched. At the second corner CN2, as the second adhesionlayer AD2, the first color filter CF1, and the first adhesion layer AD1disposed at the second corner CN2 are etched, the first transparentelectrode 108 of the first light emitting part LE1 may be exposed. Atthe third corner CN3, the second transparent electrode 208 of the secondlight emitting part LE2 may be exposed.

The third light emitting part LE3 may have a structure, in which thethird n-type semiconductor layer 302, the third active layer 304, thethird p-type semiconductor layer 306, and the third transparentelectrode 308 disposed at the second corner CN2 and the third corner CN3are etched, and the third n-type semiconductor layer 302, the thirdactive layer 304, and the third p-type semiconductor layer 306 disposedat the fourth corner CN4 are etched. At the second corner CN2, as thethird n-type semiconductor layer 302, the third active layer 304, thethird p-type semiconductor layer 306, the third transparent electrode308, the second color filter CF2, the third adhesion layer AD3, thesecond n-type semiconductor layer 202, the second active layer 204, thesecond p-type semiconductor layer 206, the second transparent electrode208, the second adhesion layer AD2, the first adhesion layer AD1, andthe first color filter CF1 disposed at the second corner CN2 are etched,the first transparent electrode 108 of the first light emitting part LE1may be exposed. At the third corner CN3, as the third n-typesemiconductor layer 302, the third active layer 304, the third p-typesemiconductor layer 306, the third transparent electrode 308, the secondcolor filter CF2, the third adhesion layer AD3, the second n-typesemiconductor layer 202, the second active layer 204, and the secondp-type semiconductor layer 206 disposed at the third corner CN3 areetched, the second transparent electrode 208 of the second lightemitting part LE2 may be exposed. At the fourth corner CN4, as the thirdn-type semiconductor layer 302, the third active layer 304, and thethird p-type semiconductor layer 306 are etched, the third transparentelectrode 308 of the third light emitting part LE3 may be exposed.

The light emitting device may further include, in the second lightemitting part LE2 and the third light emitting part LE3 having the mesastructures, a passivation layer PAL that fills the etched portions fromforming the mesa structures. A first via structure VS1, a second viastructure VS2, and a third via structure VS3 may be electrically coupledwith the first transparent electrode 108, the second transparentelectrode 208 and the third transparent electrode 308, respectively,through the passivation layer PAL.

In the illustrated exemplary embodiment, since the first light emittingpart LE1, the second light emitting part LE2, the third light emittingpart LE3, the first adhesion layer AD1, the second adhesion layer AD2,the third adhesion layer AD3, the first color filter CF1, the secondcolor filter CF2, the common pad CPD, the first pad PD1, the second padPD2, the third pad PD3, the first via structure VS1, the second viastructure VS2, and the third via structure VS3 are substantially thesame as those described above with reference to FIGS. 1A to 1C, repeateddescriptions thereof will be omitted to avoid redundancy.

FIG. 3 is a cross-sectional of a light emitting device according tostill another exemplary embodiment.

Referring to FIG. 3, a light emitting device may include a first lightemitting part LE1, a second light emitting part LE2, and a third lightemitting part LE3, which are stacked on a substrate 100.

The first light emitting part LE1 may include a first n-typesemiconductor layer 102, a first active layer 104, a first p-typesemiconductor layer 106, and a first transparent electrode 108, whichare sequentially stacked, the second light emitting part LE2 may includea second n-type semiconductor layer 202, a second active layer 204, asecond p-type semiconductor layer 206, and a second transparentelectrode 208, which are sequentially stacked, and the third lightemitting part LE3 may include a third n-type semiconductor layer 302, athird active layer 304, a third p-type semiconductor layer 306, and athird transparent electrode 308, which are sequentially stacked.

The light emitting device may further include a common pad CPD, which iselectrically coupled with the first n-type semiconductor layer 102, thesecond n-type semiconductor layer 202, and the third n-typesemiconductor layer 302, a first pad PD1 electrically coupled with thefirst p-type semiconductor layer 106, a second pad PD2 electricallycoupled with the second p-type semiconductor layer 206, and a third padPD3 electrically coupled with the third p-type semiconductor layer 306.

The light emitting device may further include a first contact structureCT1 which extends through a portion of first light emitting part LE1, asecond contact structure CT2 which extends through a portion of thesecond light emitting part LE2, and a third contact structure CT3 whichextends through a portion of the third light emitting part LE3. Onesurface of the first contact structure CT1 may be brought intoelectrical contact with the first n-type semiconductor layer 102. Thesecond n-type semiconductor layer 202 may be disposed between the othersurface of the first contact structure CT1 facing away from the onesurface and the second contact structure CT2, and be brought intoelectrical contact with the first contact structure CT1 and the secondcontact structure CT2. The third n-type semiconductor layer 302 may bedisposed between the second contact structure CT2 and the third contactstructure CT3, and be brought into electrical contact with the secondcontact structure CT2 and the third contact structure CT3.

In the first contact structure CT1, the second contact structure CT2,and the third contact structure CT3, ohmic layers 110, 210 and 310,first conductive layers 112, 212 and 312, barrier layers 114, 214 and314, second conductive layers 116, 216, and 316, and bonding layers 118,218, and 318 may be sequentially stacked. Each of the first contactstructure CT1, the second contact structure CT2, and the third contactstructure CT3 may have a width that gradually decreases in a downwarddirection.

The light emitting device may further include a first color filter CF1,which surrounds the outer sidewall of the first contact structure CT1and extends onto the first transparent electrode 108, and a firstadhesion layer AD1, which surrounds the outer sidewall of the firstcolor filter CF1, extends onto the first transparent electrode 108, andbonds the first light emitting part LE1 and the second light emittingpart LE2 to each other.

The light emitting device may further include a second color filter CF2,which surrounds the outer sidewall of the second contact structure CT2and extends onto the second transparent electrode 208, and a secondadhesion layer AD2, which surrounds the outer sidewall of the secondcolor filter CF2, extends onto the second transparent electrode 208, andbonds the second light emitting part LE2 and the third light emittingpart LE3 to each other.

The light emitting device may further include an insulation layer IDL,which surrounds the outer sidewall of the third contact structure CT3and extends onto the third transparent electrode 308. The insulationlayer IDL may include a silicon oxide or a silicon nitride, for example.

In the illustrated exemplary embodiment, since the first light emittingpart LE1, the second light emitting part LE2, the third light emittingpart LE3, the first adhesion layer AD1, the second adhesion layer AD2, athird adhesion layer AD3, the first color filter CF1, the second colorfilter CF2, the insulation layer IDL, the common pad CPD, the first padPD1, the second pad PD2, the third pad PD3, the first via structure VS1,and the second via structure VS2 are substantially the same as thosedescribed above with reference to FIGS. 1A to 1C, 2A and 2B, repeateddescriptions thereof will be omitted herein.

FIG. 4 is a cross-sectional view of a light emitting device according toyet still another exemplary embodiment.

Referring to FIG. 4, a light emitting device may include a first lightemitting part LE1, a second light emitting part LE2, and a third lightemitting part LE3, which are stacked on a substrate 100.

The first light emitting part LE1 may include a first transparentelectrode 108, a first p-type semiconductor layer 106, a first activelayer 104, and a first n-type semiconductor layer 102, which aresequentially stacked, the second light emitting part LE2 may include asecond transparent electrode 208, a second p-type semiconductor layer206, a second active layer 204, and a second n-type semiconductor layer202, which are sequentially stacked, and the third light emitting partLE3 may include a third transparent electrode 308, a third p-typesemiconductor layer 306, a third active layer 304, and a third n-typesemiconductor layer 302, which are sequentially stacked.

The light emitting device may further include a common pad CPD, which iselectrically coupled with the first n-type semiconductor layer 102, thesecond n-type semiconductor layer 202, and the third n-typesemiconductor layer 302, a first pad PD1 electrically coupled with thefirst p-type semiconductor layer 106, a second pad PD2 electricallycoupled with the second p-type semiconductor layer 206, and a third padPD3 w electrically coupled with the third p-type semiconductor layer306.

The light emitting device may further include a second contact structureCT2, which extends through a portion of the second light emitting partLE2, and a third contact structure CT3, which extends through a portionof the third light emitting part LE3. One surface of the second contactstructure CT2 may be brought into electrical contact with the firstn-type semiconductor layer 102, and the other surface of the secondcontact structure CT2 facing away from the one surface may be broughtinto electrical contact with the second n-type semiconductor layer 202.One surface of the third contact structure CT3 may be brought intoelectrical contact with the second n-type semiconductor layer 202, andthe other surface of the third contact structure CT3 facing away fromthe one surface may be brought into electrical contact with the thirdn-type semiconductor layer 302. The second n-type semiconductor layer202 may be disposed between the second contact structure CT2 and thethird contact structure CT3.

In a first contact structure CT1, the second contact structure CT2, andthe third contact structure CT3, bonding layers, second conductivelayers, barrier layers, first conductive layers, and ohmic layers may besequentially stacked. Each of the first contact structure CT1, thesecond contact structure CT2, and the third contact structure CT3 mayhave a width that gradually increases in a downward direction.

The light emitting device may further include a first color filter CF1,which surrounds the outer sidewall of the second contact structure CT2and extends onto the second transparent electrode 208, and a firstadhesion layer AD1, which surrounds the outer sidewall of the firstcolor filter CF1, extends onto the first color filter CF1, and bonds thefirst light emitting part LE1 and the second light emitting part LE2 toeach other.

The light emitting device may further include a second color filter CF2,which surrounds the outer sidewall of the third contact structure CT3and extends onto the third transparent electrode 308, and a secondadhesion layer AD2, which surrounds the outer sidewall of the secondcolor filter CF2, extends onto the second color filter CF2, and bondsthe second light emitting part LE2 and the third light emitting part LE3to each other.

In the illustrated exemplary embodiment, since the first light emittingpart LE1, the second light emitting part LE2, the third light emittingpart LE3, the first adhesion layer AD1, the second adhesion layer AD2,the third adhesion layer AD3, the first color filter CF1, the secondcolor filter CF2, the insulation layer IDL, the common pad CPD, thefirst pad PD1, the second pad PD2, the third pad PD3, the first viastructure VS1, the second via structure VS2, and the third via structureVS3 are substantially the same as those described above with referenceto FIGS. 1A to 1C, 2A and 2B, repeated descriptions thereof will beomitted.

Hereafter, a method for manufacturing the light emitting devicedescribed above with reference to FIGS. 1A and 1B will be described inmore detail.

FIGS. 5 to 17 are cross-sectional views illustrating a method formanufacturing a light emitting device according to an exemplaryembodiment.

Referring to FIG. 5, a first n-type semiconductor layer 102, a firstactive layer 104, a first p-type semiconductor layer 106, and a firsttransparent electrode 108 may be formed on a first substrate 100, toform a first light emitting part LE1.

The first n-type semiconductor layer 102, the first active layer 104,and the first p-type semiconductor layer 106 may be sequentially grownon the substrate 100 through a process, such as metal organic chemicalvapor deposition (MOCVD) or molecular beam epitaxy (MBE). Then, thefirst transparent electrode 108 may be formed on the first p-typesemiconductor layer 106 by using a chemical vapor deposition (CVD)process, or a physical vapor deposition (PVD) process.

Referring to FIG. 6, by etching the first light emitting part LE1 toexpose the first n-type semiconductor layer 102, a first contact hole H1passing through the first transparent electrode 108, the first p-typesemiconductor layer 106, and the first active layer 104 may be formed.

For example, the first light emitting part LE1 may have a substantiallyquadrangular structure when viewed from the top, and the first hole H1may be disposed at a first corner CN1. The first hole H1 may have awidth that gradually decreases in a downward direction. As such, thefirst active layer 104 may have a width less than the first p-typesemiconductor layer 106, and the first p-type semiconductor layer 106may have a width less than the first transparent electrode 108.

Referring to FIG. 7, a first color filter CF1 may be continuously formedalong the surface of the first light emitting part LE1 so as not to fillthe first hole H1. The first color filter CF1 may include a DBR having astructure, in which TiO₂ and SiO₂ are alternately stacked.

Referring to FIG. 8, a first adhesion layer AD1 may be formed on thefirst light emitting part LE1 formed with the first color filter CF1, soas to fill (or bury) the first hole H1. The first adhesion layer AD1 mayinclude SOG.

Referring to FIG. 9, by etching the first adhesion layer AD1 and thefirst color filter CF1 filling the first hole H1, a first contact holeCH1 exposing the first n-type semiconductor layer 102 may be formed. Forexample, the first contact hole CH1 may have a width that graduallydecreases in the downward direction.

Referring to FIG. 10, a first contact structure CT1, which fills theinside of the first contact hole CH1 may be formed. As the first contactstructure CT1, an ohmic layer 110, a first conductive layer 112, abarrier layer 114, a second conductive layer 116, and a bonding layer118 may be sequentially stacked. The ohmic layer 110 may include Cr, thefirst conductive layer 112 may include Al, the barrier layer 114 mayinclude Ti and Ni, which are stacked a plurality of times, the secondconductive layer 116 may include Au, and the bonding layer 118 mayinclude In or Sn.

Referring to FIG. 11, a second light emitting part LE2 including asecond n-type semiconductor layer 202, a second active layer 204, asecond p-type semiconductor layer 206, and a second transparentelectrode 208 may be formed on a second substrate 200. Then, a secondhole H2, which exposes the second n-type semiconductor layer 202 may beformed, and a second adhesion layer AD2, which fills the inside of thesecond hole H2 may be formed.

Referring to FIG. 12, after forming the second contact hole CH2 exposingthe second n-type semiconductor layer 202, the second adhesion layer AD2filling the second hole H2 may be etched to form a second contactstructure CT2 to fill the second contact hole CH2. As the second contactstructure CT2, an ohmic layer 210, a first conductive layer 212, abarrier layer 214, a second conductive layer 216, and a bonding layer218 may be sequentially stacked.

Referring to FIG. 13, the second light emitting part LE2 may be turnedover and be bonded to the first light emitting part LE1, such that thebonding layer 218 of the second contact structure CT2 is boned with thebonding layer 118 of the first contact structure CT1.

Then, the second substrate 200 may be removed by a laser lift-offprocess, or the like.

Referring to FIG. 14, a third light emitting part LE3 including a thirdn-type semiconductor layer 302, a third active layer 304, a third p-typesemiconductor layer 306 and a third transparent electrode 308 may beformed on a third substrate 300. Then, a third hole H3, which exposesthe third n-type semiconductor layer 302 may be formed, and a thirdadhesion layer AD3, which fills the inside of the third hole H3 may beformed.

After forming a third contact hole CH3 exposing the third n-typesemiconductor layer 302, the third adhesion layer AD3 filling the thirdhole H3 may be etched. Then, a second color filter CF2 may becontinuously formed along the surface of the third light emitting partLE3 so as not to fill the third contact hole CH3, and a third contactstructure CT3 filling the third contact hole CH3 may be formed on thesecond color filter CF2. The second color filter CF2 may include a DBRhaving a structure, in which TiO₂ and SiO₂ are alternately stacked. Thesecond color filter CF2 may be different from the first color filter CF1in terms of the composition ratio and alternate stacking order andnumber of TiO₂ and SiO₂. As the third contact structure CT3, an ohmiclayer 310, a first conductive layer 312, a barrier layer 314, a secondconductive layer 316, and a bonding layer 318 may be sequentiallystacked.

Referring to FIG. 15, the third light emitting part LE3 may be turnedover and be bonded to the second light emitting part LE2, such that thebonding layer 318 of the third contact structure CT3 faces the secondn-type semiconductor layer 202. As such, the second light emitting partLE2 bonded with the first light emitting part LE1 may be bonded with thethird light emitting part LE3.

Then, the third substrate 300 may be removed by a laser lift-offprocess, or the like.

Referring to FIG. 16, a first via hole VIA1 exposing the firsttransparent electrode 108, a second via hole VIA2 exposing the secondtransparent electrode 208, and a third via hole VIA3 exposing the thirdtransparent electrode 308 may be formed.

The first via hole VIA1 may pass through the third light emitting partLE3, the second color filter CF2, the third adhesion layer AD3, thesecond light emitting part LE2, the second adhesion layer AD2, the firstadhesion layer AD1, and the first color filter CF1, and may expose thefirst transparent electrode 108.

The second via hole VIA2 may pass through the third light emitting partLE3, the second color filter CF2, the third adhesion layer AD3, thesecond n-type semiconductor layer 202, the second active layer 204, andthe second p-type semiconductor layer 206, and may expose the secondtransparent electrode 208.

The third via hole VIA3 may pass through the third n-type semiconductorlayer 302, the third active layer 304 and the third p-type semiconductorlayer 306, and may expose the third transparent electrode 308.

According to an exemplary embodiment, each of the first light emittingpart LE1, the second light emitting part LE2, and the third lightemitting part LE3 may have a substantially quadrangular structure whenviewed from the top. The second light emitting part LE2 may be turnedover and be disposed on the first light emitting part LE1, and the thirdlight emitting part LE3 may be turned over and be disposed on the secondlight emitting part LE2.

The first via hole VIA1 may be disposed at a second corner CN2, thesecond via hole VIA2 may be disposed at a third corner CN3, and thethird via hole VIA3 may be disposed at a fourth corner CN4.

Referring to FIG. 17, an insulation layer IDL may be formed continuouslyalong the surfaces of the third light emitting part LE3, the secondcolor filter CF2, the third adhesion layer AD3, the second lightemitting part LE2, the second adhesion layer AD2, the first color filterCF1, and the first adhesion layer AD1, so as not to fill the first viahole VIA1, the second via hole VIA2, and the third via hole VIA3. Theinsulation layer IDL may include a silicon oxide or a silicon nitride,for example.

Then, the insulation layer IDL may be etched, such that the firsttransparent electrode 108 may be exposed on the bottom of the first viahole VIA1, the second transparent electrode 208 may be exposed on thebottom of the second via hole VIA2, the third transparent electrode 308may be exposed on the bottom of the third via hole VIA3, and a portionof the third n-type semiconductor layer 302 may be exposed.

Referring back to FIG. 1B, a first via structure VS1 filling the firstvia hole VIA1 and electrically contacting the first transparentelectrode 108, a second via structure VS2 filling the second via holeVIA2 and electrically contacting the second transparent electrode 208,and a third via structure VS3 filling the third via hole VIA3 andelectrically contacting the third transparent electrode 308 may berespectively formed.

The, a first pad PD1 electrically coupled to the first via structureVS1, a second pad PD2 electrically coupled to the second via structureVS2, a third pad PD3 electrically coupled to the third via structureVS3, and a common pad CPD electrically coupled with the third n-typesemiconductor layer 302 may be additionally formed.

In some exemplary embodiments, the first pad PD1, the second pad PD2,and the third pad PD3 may be integrated with the first via structureVS1, the second via structure VS2 and the third via structure VS3,respectively.

According to exemplary embodiments, as a first n-type semiconductorlayer, a second n-type semiconductor layer, and a third n-typesemiconductor layer are electrically coupled in common to a common pad,current may be stably supplied thereto as compared to when a firstp-type semiconductor layer, a second p-type semiconductor layer, and athird p-type semiconductor layer are coupled in common.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concepts are notlimited to such embodiments, but rather to the broader scope of theappended claims and various obvious modifications and equivalentarrangements as would be apparent to a person of ordinary skill in theart.

What is claimed is:
 1. A light emitting device comprising: a first lightemitting part including a first n-type semiconductor layer, a firstactive layer, and a first p-type semiconductor layer; a second lightemitting part disposed on a first surface of the first light emittingpart, and including a second n-type semiconductor layer, a second activelayer, and a second p-type semiconductor layer, the second n-typesemiconductor layer having a first surface and a second surface opposingthe first surface; a third light emitting part disposed on a firstsurface of the second light emitting part, and including a third n-typesemiconductor layer, a third active layer, and a third p-typesemiconductor layer; a first contact structure contacting the firstsurface of the second n-type semiconductor layer; and a second contactstructure contacting the second surface of the second n-typesemiconductor layer, wherein: the first contact structure extends intothe first light emitting part to electrically contact the first n-typesemiconductor layer; and the second contact structure extends into thesecond light emitting part to electrically contact the third n-typesemiconductor layer.
 2. The light emitting device according to claim 1,further comprising a third contact structure extending into the thirdlight emitting part to electrically contact the third n-typesemiconductor layer.
 3. The light emitting device according to claim 2,further comprising: a common pad disposed at a first corner of the lightemitting device, and electrically coupled with the first, second, andthird n-type semiconductor layers; a first pad disposed at a secondcorner of the light emitting device, and electrically coupled with thefirst p-type semiconductor layer; a second pad disposed at a thirdcorner of the light emitting device, and electrically coupled with thesecond p-type semiconductor layer; and a third pad disposed at a fourthcorner of the light emitting device, and electrically coupled with thethird p-type semiconductor layer, wherein the first, second, and thirdn-type semiconductor layers are electrically coupled with one another bythe first to third contact structures.
 4. The light emitting deviceaccording to claim 3, wherein: the second light emitting part has a mesastructure, such that a portion thereof in the second corner is removed;and the third light emitting part has a mesa structure, such thatportions thereof in the second and third corners are removed.
 5. Thelight emitting device according to claim 1, further comprising: a firstcolor filter surrounding an outer sidewall of the first contactstructure, and extending onto the first p-type semiconductor layer; afirst adhesion layer surrounding an outer sidewall of the first colorfilter, and extending onto the first color filter; a second color filtersurrounding an outer sidewall of the second contact structure, andextending onto the second p-type semiconductor layer; and a secondadhesion layer surrounding an outer sidewall of the second color filter,and extending onto the second color filter.
 6. The light emitting deviceaccording to claim 1, further comprising a substrate disposed over asecond surface of the first light emitting part opposing the firstsurface thereof.
 7. The light emitting device according to claim 1,further comprising: a common pad disposed on the third light emittingpart, and electrically coupling the first, second, and third n-typesemiconductor layers; a first pad disposed on the third light emittingpart, and electrically coupled with the first p-type semiconductorlayer; a second pad disposed on the third light emitting part, andelectrically coupled with the second p-type semiconductor layer; and athird pad disposed on the third light emitting part, and electricallycoupled with the third p-type semiconductor layer.